Room-Temperature Hysteresis in a Hole-Based Quantum Dot Memory Structure

Abstract

We demonstrate a memory effect in self-assembled InAs/Al0.9Ga0.1As quantum dots (QDs) near room temperature. The QD layer is embedded into a modulation-doped field-effect transistor (MODFET) which allows to charge and discharge the QDs and read out the logic state of the QDs. The hole storage times in the QDs decrease from seconds at 200 K down to milliseconds at room temperature.