InP-Based Waveguide Triple Transit Region Photodiodes for Hybrid Integration with Passive Optical Silica Waveguides

Abstract

We report on a novel InP-based 1.55 μm waveguide triple transit region photodiode (TTR-PD) structure for hybrid integration with passive optical silica waveguides. Using the beam propagation method, numerical analyses reveal that, for evanescent optical coupling between a passive silica waveguide and the InP-based waveguide TTR-PD, a coupling efficiency of about 90% can be obtained. In addition to that, an absorption of about 50% is simulated within a TTR-PD length of 30 µm. For fabricated TTR-PD chips, a polarization dependent loss (PDL) of less than 0.9 dB is achieved within the complete optical C-band. At the operational wavelength of 1.55 µm, a reasonable PDL of 0.73 dB is measured. The DC responsivity and the RF responsivity are achieved on the order of 0.52 A/W and 0.24 A/W, respectively. Further, a 3 dB bandwidth of 132 GHz is experimentally demonstrated and high output-power levels exceeding 0 dBm are obtained. Even at the 3 dB cut-off frequency, no saturation effects occur at a photocurrent of 15.5 mA and an RF output power of −4.6 dBm is achieved. In addition to the numerical and experimental achievements, we propose a scheme for a hybrid-integrated InP/silicon-based photonic millimeter wave transmitter.

Keywords

• photonic integrated circuits
• silicon photonics hybrid integration
• heterogeneous integration
• indium phosphide photonics
• silica and silicon nitride photonics
• optical interconnects
• telecommunications
• microwave photonics