Gas phase alloyed crystalline S–Se dielectrics with high ionic mobility

Pradyumna Kumar Chand; Radha Raman; Zhi-Long Yen; Ian Daniell Santos; Wei-Ssu Liao; Ya-Ping Hsieh; Mario Hofmann

Journal of Science: Advanced Materials and Devices (Sep 2024)

Gas phase alloyed crystalline S–Se dielectrics with high ionic mobility

Pradyumna Kumar Chand,
Radha Raman,
Zhi-Long Yen,
Ian Daniell Santos,
Wei-Ssu Liao,
Ya-Ping Hsieh,
Mario Hofmann

Affiliations

Pradyumna Kumar Chand: Department of Chemistry, National Taiwan University, Taipei, 10617, Taiwan; Nanoscience and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei, 105210, Taiwan; Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan; Department of Physics, National Taiwan University, Taipei, 10617, Taiwan
Radha Raman: Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan; Department of Physics, National Taiwan University, Taipei, 10617, Taiwan; Department of Physics, National Central University, Chung-Li, 320, Taiwan; Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei, 105210, Taiwan
Zhi-Long Yen: Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan; Molecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei, 105210, Taiwan; International Graduate Program of Molecular Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
Ian Daniell Santos: Nanoscience and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei, 105210, Taiwan; Department of Physics, National Taiwan University, Taipei, 10617, Taiwan
Wei-Ssu Liao: Department of Chemistry, National Taiwan University, Taipei, 10617, Taiwan; Center for Emerging Material and Advanced Devices, National Taiwan University, Taipei, 10617, Taiwan
Ya-Ping Hsieh: Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan
Mario Hofmann: Department of Physics, National Taiwan University, Taipei, 10617, Taiwan; Corresponding author.

Journal volume & issue: Vol. 9, no. 3
p. 100763

Abstract

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The advancement of future electronic devices necessitates dielectric materials with enhanced compositional complexity and improved capabilities. We here demonstrate a gas-phase alloying approach that yields ultrathin and crystalline dielectrics with attractive properties for the integration into electronics. A surface-selective deposition process was shown to produce sulfur (S) and selenium (Se) alloys with large-scale uniformity. Through combination of experimental diffraction analysis and materials modeling, we establish the crystallinity of the alloy with a modified lattice structure compared to the host materials. The resulting lattice arrangement endows the alloy dielectric with high ionic mobility as validated by electrochemical impedance spectroscopy. Leveraging this innovative feature, we fabricate memristive devices exhibiting promising performance characteristics. Our findings demonstrate the feasibility of utilizing gas-phase alloying to engineer dielectrics with superior properties and functionality for future device integration.

Published in Journal of Science: Advanced Materials and Devices

ISSN: 2468-2284 (Print); 2468-2179 (Online)
Publisher: Elsevier
Country of publisher: Netherlands
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: https://www.journals.elsevier.com/journal-of-science-advanced-materials-and-devices

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