Iranian Journal of Physics Research (Aug 2009)
Changes in the localization length with vanadium doping in the Gd123 structure
Abstract
The normal state behavior of the Gd123 samples doped with vanadium has been studied. A metal-insulator transition in samples has been observed. The normal state resistivity has been compared with the variable range hoping model, which shows the 2D-VRH and CG having a better agreement for our samples. The localization length is calculated, which shows a decrease with doping, and for x=0.15 this drop is significant.