PLD of α-Ga2O3 on m-plane Al2O3: Growth regime, growth process, and structural properties

Abstract

Phase-pure α-Ga2O3 thin films with high surface quality and crystallinity have been grown on m-plane sapphire using pulsed laser deposition (PLD). Therefore, the influence of growth temperature, oxygen background pressure, and film thickness on the structural properties is investigated to determine the growth window for phase-pure corundum structured α-Ga2O3. Samples were analyzed using x-ray diffraction (XRD), atomic force microscopy (AFM), and spectroscopic ellipsometry measurements. A distinct growth window in favor of phase-pure (10.0)-oriented α-Ga2O3 for growth temperatures above 480 °C and low oxygen partial pressures p(O2) of 3 × 10−4 mbar is identified. The growth rate increases significantly with increasing oxygen pressure. Furthermore, it shows an Arrhenius-like decrease for lower temperatures, caused by the increasing desorption of volatile Ga2O suboxides. It was found that for thicker layers, the growth of monoclinic β-Ga2O3 is promoted likely facilitated by the c-facets of the α-Ga2O3 grains. This leads to a (010)-oriented island growth corroborated by stripe-like features in AFM scans and a corresponding in-plane orientation confirmed by XRD ϕ-scans. For oxygen partial pressures above 3 × 10−4 mbar and Tg < 540 °C, the formation of mixed (10.0) α-Ga2O3 and spinel-defective (110)-γ-Ga2O3 manifesting as defective inclusions was observed independent of the layer thickness d. A corresponding p(O2) − d − T phase diagram for the growth of Ga2O3 on m-plane sapphire by PLD is provided.