Topology and Photoelectric Properties of Heterostructure p-GaTe – n-InSe

Abstract

We investigated the photoelectrical properties of the heterojunctions p-GaTe – n-InSe fabricated by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. The AFM-images revealed that there was formed thin oxide dielectric layer of Ga₂O₃ on the heterointerface p-GaTe – n-InSe. The energy band diagram was constructed. It was established that the p-GaTe – n-InSe heterojunction is photosensitive in the spectral range 0.74 - 1.0 µm. Key words: InSe, GaTe, layered crystals, heterojunction, AFM-images spectral characteristics.