Contribution of internal ionization processes in semiconductors to radiative losses of relativistic electrons

Abstract

The study presents analysis of mass radiative energy losses (RL) incurred by relativistic electrons in different materials commonly used in semiconductor electronics. We have specifically focused on accounting for the processes of 'internal' ionization, resulting in the production of electron-hole pairs in semiconductors and dielectrics. We have established that accounting for these processes is the only method offering consistent explanations on the values of mass RLs observed experimentally. The analysis performed should allow to make more detailed predictions for the performance of semiconductor devices in real conditions, particularly, in space.

Keywords

• relativistic electron
• ionization potential
• radiative energy losses
• silicon
• germanium
• graphene
• electron accelerator
• electron-hole pair