Nature Communications (Jun 2023)
Monolithically-grained perovskite solar cell with Mortise-Tenon structure for charge extraction balance
- Fangfang Wang,
- Mubai Li,
- Qiushuang Tian,
- Riming Sun,
- Hongzhuang Ma,
- Hongze Wang,
- Jingxi Chang,
- Zihao Li,
- Haoyu Chen,
- Jiupeng Cao,
- Aifei Wang,
- Jingjin Dong,
- You Liu,
- Jinzheng Zhao,
- Ying Chu,
- Suhao Yan,
- Zichao Wu,
- Jiaxin Liu,
- Ya Li,
- Xianglin Chen,
- Ping Gao,
- Yue Sun,
- Tingting Liu,
- Wenbo Liu,
- Renzhi Li,
- Jianpu Wang,
- Yi-bing Cheng,
- Xiaogang Liu,
- Wei Huang,
- Tianshi Qin
Affiliations
- Fangfang Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Mubai Li
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Qiushuang Tian
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Riming Sun
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Hongzhuang Ma
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Hongze Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Jingxi Chang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Zihao Li
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Haoyu Chen
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Jiupeng Cao
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Aifei Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Jingjin Dong
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- You Liu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Jinzheng Zhao
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Ying Chu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Suhao Yan
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Zichao Wu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Jiaxin Liu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Ya Li
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Xianglin Chen
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Ping Gao
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Yue Sun
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Tingting Liu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Wenbo Liu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Renzhi Li
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Yi-bing Cheng
- Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology
- Xiaogang Liu
- Department of Chemistry, National University of Singapore
- Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- Tianshi Qin
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech)
- DOI
- https://doi.org/10.1038/s41467-023-38926-3
- Journal volume & issue
-
Vol. 14,
no. 1
pp. 1 – 10
Abstract
Abstract Although the power conversion efficiency values of perovskite solar cells continue to be refreshed, it is still far from the theoretical Shockley-Queisser limit. Two major issues need to be addressed, including disorder crystallization of perovskite and unbalanced interface charge extraction, which limit further improvements in device efficiency. Herein, we develop a thermally polymerized additive as the polymer template in the perovskite film, which can form monolithic perovskite grain and a unique “Mortise-Tenon” structure after spin-coating hole-transport layer. Importantly, the suppressed non-radiative recombination and balanced interface charge extraction benefit from high-quality perovskite crystals and Mortise-Tenon structure, resulting in enhanced open-circuit voltage and fill-factor of the device. The PSCs achieve certified efficiency of 24.55% and maintain >95% initial efficiency over 1100 h in accordance with the ISOS-L-2 protocol, as well as excellent endurance according to the ISOS-D-3 accelerated aging test.