Sensors (Mar 2020)

Novel Magnetic Field Modulation Concept Using Multiferroic Heterostructure for Magnetoresistive Sensors

  • Long Pan,
  • Mengchun Pan,
  • Jiafei Hu,
  • Yueguo Hu,
  • Yulu Che,
  • Yang Yu,
  • Nan Wang,
  • Weicheng Qiu,
  • Peisen Li,
  • Junping Peng,
  • Jianzhong Jiang

DOI
https://doi.org/10.3390/s20051440
Journal volume & issue
Vol. 20, no. 5
p. 1440

Abstract

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The low frequency magnetic field detection ability of magnetoresistive (MR)sensor is seriously affected by 1/f noise. At present, the method to suppress the influence of low frequency noise is mainly to modulate the measured magnetic field by mechanical resonance. In this paper, a novel modulation concept employing a magnetoelectric coupling effect is proposed. A design method of modulation structure based on an equivalent magnetic circuit model (EMCM) and a single domain model of in-plane moment was established. An EMCM was established to examine the relationship between the permeability of flux modulation film (FMF) and modulation efficiency, which was further verified through a finite element simulation model (FESM). Then, the permeability modulated by the voltage of a ferroelectric/ferromagnetic (FE/FM) multiferroic heterostructure was theoretically studied. Combining these studies, the modulation structure and the material were further optimized, and a FeSiBPC/PMN-PT sample was prepared. Experimental results show that the actual magnetic susceptibility modulation ability of FeSiBPC/PMN-PT reached 150 times, and is in good agreement with the theoretical prediction. A theoretical modulation efficiency higher than 73% driven by a voltage of 10 V in FeSiBPC/PMN-PT can be obtained. These studies show a new concept for magnetoelectric coupling application, and establish a new method for magnetic field modulation with a multiferroic heterostructure.

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