280–300 GHz SiGe‐InP hybrid‐integrated transmitter with 21.9 dBm EIRP and 10 Gbps data rate

Abstract

Abstract In this paper, a 280–300 GHz hybrid‐integrated transmitter is proposed. The advantages of the SiGe and InP chips are fully made use by integrating these two chips. For low cost and high integration, the local oscillator chain and mixer are based on chips in SiGe technology, and the 300‐GHz power amplifier and on‐chip antenna are realised in InP technology for high output power and small die size. The low‐cost bonding wires are introduced for the interconnection between these two chips, and the lens are attached above the on‐chip antenna for further EIRP enhancement. Finally, the proposed transmitter is fabricated and measured, which shows comparable performances with 21.9 dBm EIRP (equivalent isotropic radiated power) and 10 Gbps data rate.

Keywords

• BiCMOS integrated circuits
• III‐V semiconductors
• system‐on‐chip
• transmitters