Solid State Physics Department, National Research Centre, 12311 Dokki, Giza, Egypt
H. Mohamed
Solid State Physics Department, National Research Centre, 12311 Dokki, Giza, Egypt
A. Shengelaya
Department of Physics, Ivane Javakhishvili Tbilisi State University , 0179 Tbilisi, Georgia; Ivane Javakhishvili Tbilisi State University , Andronikashvili Institute of Physics, 0177 Tbilisi, Georgia
E. Chikoidze
Groupe d’Étude de la Matière Condensée (GEMaC), CNRS, Université Paris-Saclay , 78035 Versailles, France
Y. Dumont
Groupe d’Étude de la Matière Condensée (GEMaC), CNRS, Université Paris-Saclay , 78035 Versailles, France
M. Neumann-Spallart
Groupe d’Étude de la Matière Condensée (GEMaC), CNRS, Université Paris-Saclay , 78035 Versailles, France
Annealing of sprayed pure and Mg doped CuCrO _2 thin films by high intensity, short time light irradiation leads to a single delafossite phase at comparatively low temperatures compared with traditional furnace annealing. P-type crystalline undoped and Mg-doped CuCrO _2 films were obtained within few minutes by annealing with halogen lamp between 550 °C and 650 °C in Ar atmosphere. Transport properties of Mg-doped thin films were comparable to furnace annealed samples despite much shorter annealing time. The results demonstrate that post-annealing of chemically deposited samples using light irradiation is an effective and fast method for obtaining transparent conducting delafossite thin films.
