Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul, Republic of Korea
The snapback breakdown behavior of multi-finger MOSFETs was investigated using a device simulation. It is shown that snapback breakdown voltage (SNBV) varies depending on the source/drain configuration, even with the same two-finger structure. This results from the hole current crowding below the shared source, which further increases forward biasing at the source-substrate junction and eventually leads to premature activation of the parasitic bipolar junction transistor (BJT). Double-pocket implantation successfully suppresses the hole current crowding and also achieves higher SNBV for two-finger MOSFET.
