Design of One Stage Class F High Power and High Frequency Power Amplifier with Two Parallel GaN Transistor for 2.5GHz Application

Abstract

In this article, high frequency power amplifier is designed based on monolithic microwave integrated circuit (MMIC) technology. For this design the process of GaN transistors with high electron mobility has been used and its length gate technology is 150nm central frequency of the amplifier is 2.5GHz. the maximum gain of the amplifier is approximately equal to 12.76dB and is designed in one stage. At this frequency, the maximum output power of the amplifier is about 39.196 dBm in 30dBm input. In the maximum output power, PAE is about 41.25% that this is maximum amount of PAE .The final area of the circuit for embedding on the chip is 25.903mm by 19.346mm.the maximum values of AM/PM and AM/AM are 2.38deg/db and 1.66dB/dB respectively. For the 3-rd intermodulation distortion (IMD3) is about -20 dBc at the center of frequency. To design this amplifier, Loadpull analysis of ADS software was used to obtain the appropriate output power.

Keywords

• high power high frequency amplifier
• process of gallium nitride
• monolithic microwave integrated circuit