Gas-Sensitive Properties of β-Ga₂O₃ Thin Films Deposited and Annealed at High Temperature

Abstract

The gas-sensitive properties of thin films of β-Ga2O3 deposited via RF magnetron sputtering while heating the substrate to 650 °C were studied. Some of the samples were subjected to additional high-temperature annealing at a temperature of 900 °C. As a result, for samples subjected to additional annealing, the response when exposed to 1% H2 increased by five once sensitivity to hydrogen-containing gases appeared. These samples are also characterized by good long-term stability compared to samples without high-temperature annealing. The improvement in gas-sensitive characteristics is explained by a decrease in oxygen vacancies and a decrease in current density by four orders of magnitude.

Keywords

• β-Ga₂O₃ thin films
• gas sensors
• high-temperature annealing
• magnetron sputtering