Zero-gap semiconductor to excitonic insulator transition in Ta2NiSe5

Y. F. Lu; H. Kono; T. I. Larkin; A. W. Rost; T. Takayama; A. V. Boris; B. Keimer; H. Takagi

doi:10.1038/ncomms14408

Nature Communications (Feb 2017)

Zero-gap semiconductor to excitonic insulator transition in Ta2NiSe5

Y. F. Lu,
H. Kono,
T. I. Larkin,
A. W. Rost,
T. Takayama,
A. V. Boris,
B. Keimer,
H. Takagi

Affiliations

Y. F. Lu: Department of Physics, University of Tokyo
H. Kono: Department of Physics, University of Tokyo
T. I. Larkin: Max Planck Institute for Solid State Research
A. W. Rost: Max Planck Institute for Solid State Research
T. Takayama: Max Planck Institute for Solid State Research
A. V. Boris: Max Planck Institute for Solid State Research
B. Keimer: Max Planck Institute for Solid State Research
H. Takagi: Department of Physics, University of Tokyo

DOI: https://doi.org/10.1038/ncomms14408
Journal volume & issue: Vol. 8, no. 1
pp. 1 – 7

Abstract

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The nature of an insulating phase in Ta2NiSe5 is an open question. Here, Lu et al. report transport, thermodynamic and optical evidences being fully consistent with an excitonic insulator phase in this material.

Published in Nature Communications

ISSN: 2041-1723 (Online)
Publisher: Nature Portfolio
Country of publisher: United Kingdom
LCC subjects: Science
Website: https://www.nature.com/ncomms/

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