A wideband cryogenic microwave low-noise amplifier

Abstract

A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.

Keywords

• cryogenic low-noise amplifier
• high-electron-mobility transistor (hemt)
• hemt amplifier
• microwave cryogenic amplifier
• microwave superconducting circuit readout
• superconducting qubit readout