New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis

Abstract

A new technological approach to production of structurally perfect epitaxial films LPE- grown on “soft” porous n -InP substrates is considered. We studied surface morphology, boundary between phases in TiBx-n-InP contact and I-V curves of Au-TiBx-n-InP Schottky diodes made on “soft” and “rigid” (standard) n -InP substrates. The advantages of epitaxial layers grown on porous n -InP substrates and barrier structures on their basis are demonstrated