Publisher’s Note: “Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement” [AIP Advances 6, 095021 (2016)]

Affiliations

Bin Dong: Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
Jie Lin: Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
Ning Wang: Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
Ling-li Jiang: Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
Zong-dai Liu: Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
Xiaoyan Hu: Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
Kai Cheng: Enkris Semiconductor Inc., NW-20v, Nanopolis Suzhou, 99 Jinji Avenue, 215123, Suzhou, China
Hong-yu Yu: Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, China

Abstract

No abstracts available.