ChemistryOpen
(May 2020)
Liquid‐Phase Quasi‐Epitaxial Growth of Highly Stable, Monolithic UiO‐66‐NH2 MOF thin Films on Solid Substrates
Dr. Tawheed Hashem,
Dr. Elvia P. Valadez Sánchez,
Dr. Peter G. Weidler,
Dr. Hartmut Gliemann,
Dr. Mohamed H. Alkordi,
Prof. Christof Wöll
Affiliations
Dr. Tawheed Hashem
Institute of Functional Interfaces (IFG) Karlsruhe Institute of Technology (KIT) Hermann-von-Helmholtz-Platz 1 76344 Eggenstein-Leopoldshafen Germany
Dr. Elvia P. Valadez Sánchez
Institute of Functional Interfaces (IFG) Karlsruhe Institute of Technology (KIT) Hermann-von-Helmholtz-Platz 1 76344 Eggenstein-Leopoldshafen Germany
Dr. Peter G. Weidler
Institute of Functional Interfaces (IFG) Karlsruhe Institute of Technology (KIT) Hermann-von-Helmholtz-Platz 1 76344 Eggenstein-Leopoldshafen Germany
Dr. Hartmut Gliemann
Institute of Functional Interfaces (IFG) Karlsruhe Institute of Technology (KIT) Hermann-von-Helmholtz-Platz 1 76344 Eggenstein-Leopoldshafen Germany
Dr. Mohamed H. Alkordi
Center for Materials Science Zewail City of Science and Technology October Gardens, 6th of October Giza 12578 Egypt
Prof. Christof Wöll
Institute of Functional Interfaces (IFG) Karlsruhe Institute of Technology (KIT) Hermann-von-Helmholtz-Platz 1 76344 Eggenstein-Leopoldshafen Germany
DOI
https://doi.org/10.1002/open.201900324
Journal volume & issue
Vol. 9,
no. 5
Abstract
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Abstract High quality, monolithic UiO‐66‐NH2 thin films on diverse solid substrates have been prepared via a low temperature liquid phase epitaxy method. The achievement of continuous films with low defect densities and great stability against high temperatures and hot water is proven, clearly outperforming other reported types of MOF thin films.
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