Preparation and Characterization of Thin-Film Solar Cells with Ag/C60/MAPbI3/CZTSe/Mo/FTO Multilayered Structures

Tsung-Wen Chang; Chzu-Chiang Tseng; Dave W. Chen; Gwomei Wu; Chia-Ling Yang; Lung-Chien Chen

doi:10.3390/molecules26123516

Molecules (Jun 2021)

Preparation and Characterization of Thin-Film Solar Cells with Ag/C60/MAPbI3/CZTSe/Mo/FTO Multilayered Structures

Tsung-Wen Chang,
Chzu-Chiang Tseng,
Dave W. Chen,
Gwomei Wu,
Chia-Ling Yang,
Lung-Chien Chen

Affiliations

Tsung-Wen Chang: Department of Electronic Engineering, Institute of Electro-Optical Engineering, Chang Gung University, Chang Gung Memorial Hospital, Taoyuan 333, Taiwan
Chzu-Chiang Tseng: Department of Electronic Engineering, Institute of Electro-Optical Engineering, Chang Gung University, Chang Gung Memorial Hospital, Taoyuan 333, Taiwan
Dave W. Chen: Department of Electronic Engineering, Institute of Electro-Optical Engineering, Chang Gung University, Chang Gung Memorial Hospital, Taoyuan 333, Taiwan
Gwomei Wu: Department of Electronic Engineering, Institute of Electro-Optical Engineering, Chang Gung University, Chang Gung Memorial Hospital, Taoyuan 333, Taiwan
Chia-Ling Yang: Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
Lung-Chien Chen: Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 106, Taiwan

DOI: https://doi.org/10.3390/molecules26123516
Journal volume & issue: Vol. 26, no. 12
p. 3516

Abstract

Read online

New solar cells with Ag/C60/MAPbI3/Cu2ZnSnSe4 (CZTSe)/Mo/FTO multilayered structures on glass substrates have been prepared and investigated in this study. The electron-transport layer, active photovoltaic layer, and hole-transport layer were made of C60, CH3NH3PbI3 (MAPbI3) perovskite, and CZTSe, respectively. The CZTSe hole-transport layers were deposited by magnetic sputtering, with the various thermal annealing temperatures at 300 °C, 400 °C, and 500 °C, and the film thickness was also varied at 50~300 nm The active photovoltaic MAPbI3 films were prepared using a two-step spin-coating method on the CZTSe hole-transport layers. It has been revealed that the crystalline structure and domain size of the MAPbI3 perovskite films could be substantially improved. Finally, n-type C60 was vacuum-evaporated to be the electronic transport layer. The 50 nm C60 thin film, in conjunction with 100 nm Ag electrode layer, provided adequate electron current transport in the multilayered structures. The solar cell current density–voltage characteristics were evaluated and compared with the thin-film microstructures. The photo-electronic power-conversion efficiency could be improved to 14.2% when the annealing temperature was 500 °C and the film thickness was 200 nm. The thin-film solar cell characteristics of open-circuit voltage, short-circuit current density, fill factor, series-resistance, and Pmax were found to be 1.07 V, 19.69 mA/cm2, 67.39%, 18.5 Ω and 1.42 mW, respectively.

Published in Molecules

ISSN: 1420-3049 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Science: Chemistry: Organic chemistry
Website: http://www.mdpi.com/journal/molecules

About the journal

Abstract

Keywords