The Growth Methods and Field Emission Studies of Low-Dimensional Boron-Based Nanostructures

Haibo Gan; Tong Zhang; Zekun Guo; Haojian Lin; Zijuan Li; Huanjun Chen; Jun Chen; Fei Liu

doi:10.3390/app9051019

Applied Sciences (Mar 2019)

The Growth Methods and Field Emission Studies of Low-Dimensional Boron-Based Nanostructures

Haibo Gan,
Tong Zhang,
Zekun Guo,
Haojian Lin,
Zijuan Li,
Huanjun Chen,
Jun Chen,
Fei Liu

Affiliations

Haibo Gan: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Tong Zhang: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Zekun Guo: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Haojian Lin: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Zijuan Li: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Huanjun Chen: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Jun Chen: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
Fei Liu: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China

DOI: https://doi.org/10.3390/app9051019
Journal volume & issue: Vol. 9, no. 5
p. 1019

Abstract

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Based on the morphology characteristics, low-dimensional (LD) nanostructures with high aspect ratio can be usually divided into nanowire, nanocone, nanotube, nanorod, nanoribbon, nanobelt and so on. Among numerous LD nanostructures, boron-based nanostructures attracted much interest in recent years because they have high melting-point, large electric and thermal conductivity, and low work function. Compared to traditional thermal emission, field emission (FE) has notable advantages, such as lower power dissipation, longer working life, room-temperature operation, higher brightness and faster switching speed. Most studies reveal they have lower turn-on and threshold fields as well as high current density, which are believed as ideal cold cathode nanomaterials. In this review, we will firstly introduce the growth methods of LD boron-based nanostructures (boron monoelement and rare-earth metal hexaboride). Then, we will discuss their FE properties and applications. At last, the conclusions and outlook will be summarized based on the above studies.

Published in Applied Sciences

ISSN: 2076-3417 (Online)
Publisher: MDPI AG
Country of publisher: Switzerland
LCC subjects: Technology: Engineering (General). Civil engineering (General); Science: Biology (General); Science: Physics; Science: Chemistry
Website: http://www.mdpi.com/journal/applsci

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