Research of synthesis conditions and structural features of heterostructure AlXGa1-XAs/GaAs of the “desert rose” type

Abstract

In this study, we report the synthesis of the heterostructure by a simple and inexpensive electrochemical deposition method. As a result, nanocrystallites of the ''desert rose'' type were synthesized on the surface of mono-GaAs. According to research results, it was established that the AlxGa1–xAs/GaAs heterostructure has a ''soft'' transitional porous layer, which ensures excellent quality of nanostructures and good adhesion to the crystal surface. Furthermore, it is shown that semiconductors GaAs and AlAs are extreme cases of AlxGa1-xAs at x=0 and x=1, respectively. These semiconductors have almost identical crystal lattice parameters. Therefore, GaAs can be considered an ideal substrate to grow the AlxGa1-xAs/GaAs heterostructure. Such structures can find interesting fields of application because of their developed morphology and large effective area.

Keywords

• Gallium arsenide
• Aluminum arsenide
• Aluminum gallium arsenide
• Heterostructure
• Nanostructure
• Crystal lattice