Emitter doping influence on electrical performance of C-Si cells under concentrated light

Abstract

In the present work we have investigated the influence of the emitter doping on the cell performance of c-Si devices at one sun and under concentrated light. We have realized different devices using FZ p-type Boron doped wafers and varying the sheet resistance of the emitters aiming at analyzing the effects of junction depth and concentration on the surface of doped elements affecting the recombination process. We made a comparative study of the electrical behaviour of different devices (current-voltage and quantum efficiency characterization) at one sun and under concentrated light. The best result achieved is η > 19% at 100 suns.