Development of Inverter Circuits with Dual Control Subchannel Areas of Integral CMOS Sensor Element

Abstract

The use of an integrated sensor element as an addition of inverter, which converts the resistance of a sensitive element into the level of the output pulse signal, is investigated. Inverter circuits with different control options for sub-channel areas of MOS transistors are modeled in the LTSpice program. Based on the simulation results, dependencies graphs of the output signal amplitude on the resistance of a sensitive element and sensor’s sensitivity are drawn, and the shapes of the output signals are shown.

Keywords

• resistive sensor
• inverter
• mos transistor
• subchannel area
• signal
• amplitude