AIP Advances (May 2018)

Static magnetism and thermal switching in randomly oriented L10 FePt thin films

  • A. Lisfi,
  • S. Pokharel,
  • A. Alqarni,
  • O. Akioya,
  • W. Morgan,
  • M. Wuttig

DOI
https://doi.org/10.1063/1.5007865
Journal volume & issue
Vol. 8, no. 5
pp. 056438 – 056438-6

Abstract

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Static magnetism and thermally activated magnetic relaxation were investigated in granular FePt films (20 nm-200 nm thick) with random magnetic anisotropy through hysteresis loop, torque curve and magnetization time dependence measurements. While the magnetism of thicker film (200 nm thick) is dominated by a single switching of the ordered L10 phase, thinner film (20 nm) displays a double switching, which is indicative of the presence of the disordered cubic phase. The pronounced behavior of double switching in thinner film suggests that the film grain boundary is composed of soft cubic magnetic phase. The magnetic relaxation study reveals that magnetic viscosity S of the films is strongly dependent on the external applied field and exhibits a maximum value (12 kAm) around the switching field and a vanishing behavior at low (1 kOe) and large (12 kOe) fields. The activation volume of the thermal switching was found to be much smaller than the physical volume of the granular structure due to the incoherent rotation mode of the magnetization reversal mechanism, which is established to be domain wall nucleation.