III-nitride nanowires for emissive display technology

Abstract

The field of III-nitride (InGaN) nanowire micro light-emitting diode (µ-LED) displays is rapidly expanding and holds great promise, thanks to their chemical stability and outstanding performance across the entire visible spectrum. Notably, III-nitride (InGaN) nanowires, free from compositional substitutions, dislocations, and piezoelectric polarization effects associated with lateral strain relaxation with large surface-to-bulk-volume ratio, are advantage-missing in traditional planar counterparts. This comprehensive overview examines the potential landscape, associated challenges, strategies to overcome them, and opportunities for the development of advanced µ-LED displays with vibrant and accurate color representation, contributing to the advancement of next-generation display technologies. This study also covers the current obstacles faced by III-nitride (InGaN) nanowire-µ-LED displays and possible solutions to address them.

Keywords

• µ-LED
• full-color LED
• InGaN nanowires
• multi-quantum well (MQW)
• display technology