Mechanism of ion etching polycrystalline copper and influence on surface morphology

Abstract

In order to better understand the surface morphology and formation mechanism of ion-etched pure copper, argon ion implantation was used to etch polycrystalline pure copper. By changing the power parameters and the original surface roughness, the variation of the surface morphology of polycrystalline pure copper with etching time under different conditions was investigated. Scanning electron microscope and white light interferometer were used to characterize and test the grain orientation, surface morphology and surface roughness of polycrystalline pure copper after etching. The relationship between grain orientation and etching rate was revealed by electron backscattering diffraction and white light interferometer. The results show that both the power parameters and the original surface roughness can affect the morphology change, and the difference of etching rate is the main reason for the morphology change. The etching degree of different crystal surfaces is anisotropic, and the etching rate of {100} oriented grains is faster than that of {111} and {110} oriented grains. The evolution of surface roughness after etching goes through two stages: rapid increase to gradual stability.

Keywords

• polycrystalline pure copper
• grain orientation
• morphology
• roughness