Study of a Lead-Free Perovskite Solar Cell Using CZTS as HTL to Achieve a 20% PCE by SCAPS-1D Simulation
Ana C. Piñón Reyes,
Roberto C. Ambrosio Lázaro,
Karim Monfil Leyva,
José A. Luna López,
Javier Flores Méndez,
Aurelio H. Heredia Jiménez,
Ana L. Muñoz Zurita,
Francisco Severiano Carrillo,
Esteban Ojeda Durán
Affiliations
Ana C. Piñón Reyes
Centro de Investigaciones en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 sur, Edif. IC5 C.U., Col. San Manuel, Puebla C.P. 72570, Mexico
Roberto C. Ambrosio Lázaro
Facultad de Electrónica, Benemérita Universidad Autónoma de Puebla (BUAP)-Ciudad Universitaria, Blvd. Valsequillo y Esquina, Av. San Claudio s/n, Col. San Manuel, Puebla C.P. 72570, Mexico
Karim Monfil Leyva
Centro de Investigaciones en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 sur, Edif. IC5 C.U., Col. San Manuel, Puebla C.P. 72570, Mexico
José A. Luna López
Centro de Investigaciones en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 sur, Edif. IC5 C.U., Col. San Manuel, Puebla C.P. 72570, Mexico
Javier Flores Méndez
Facultad de Electrónica, Benemérita Universidad Autónoma de Puebla (BUAP)-Ciudad Universitaria, Blvd. Valsequillo y Esquina, Av. San Claudio s/n, Col. San Manuel, Puebla C.P. 72570, Mexico
Aurelio H. Heredia Jiménez
Facultad de Electrónica, UPAEP, 21 sur No. 1103, Barrio de Santiago, Puebla C.P. 72410, Mexico
Ana L. Muñoz Zurita
Facultad de Electrónica, Benemérita Universidad Autónoma de Puebla (BUAP)-Ciudad Universitaria, Blvd. Valsequillo y Esquina, Av. San Claudio s/n, Col. San Manuel, Puebla C.P. 72570, Mexico
Francisco Severiano Carrillo
Instituto Politécnico Nacional, Centro de Investigación en Biotecnología Aplicada Unidad Tlaxcala, Carretera a Santa Inés Tecuexcomac, a 1.5 km, Ex-Hacienda San Juan Molino, Tlaxcala C.P. 90700, Mexico
Esteban Ojeda Durán
Centro de Investigaciones en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Av. San Claudio y 14 sur, Edif. IC5 C.U., Col. San Manuel, Puebla C.P. 72570, Mexico
In this paper, a n-i-p planar heterojunction simulation of Sn-based iodide perovskite solar cell (PSC) is proposed. The solar cell structure consists of a Fluorine-doped tin oxide (FTO) substrate on which titanium oxide (TiO2) is placed; this material will act as an electron transporting layer (ETL); then, we have the tin perovskite CH3NH3SnI3 (MASnI3) which is the absorber layer and next a copper zinc and tin sulfide (CZTS) that will have the function of a hole transporting layer (HTL). This material is used due to its simple synthesis process and band tuning, in addition to presenting good electrical properties and stability; it is also a low-cost and non-toxic inorganic material. Finally, gold (Au) is placed as a back contact. The lead-free perovskite solar cell was simulated using a Solar Cell Capacitance Simulator (SCAPS-1D). The simulations were performed under AM 1.5G light illumination and focused on getting the best efficiency of the solar cell proposed. The thickness of MASnI3 and CZTS, band gap of CZTS, operating temperature in the range between 250 K and 350 K, acceptor concentration and defect density of absorber layer were the parameters optimized in the solar cell device. The simulation results indicate that absorber thicknesses of 500 nm and 300 nm for CZTS are appropriate for the solar cell. Further, when optimum values of the acceptor density (NA) and defect density (Nt), 1016 cm−3 and 1014 cm−3, respectively, were used, the best electrical values were obtained: Jsc of 31.66 mA/cm2, Voc of 0.96 V, FF of 67% and PCE of 20.28%. Due to the enhanced performance parameters, the structure of the device could be used in applications for a solar energy harvesting system.
