Border Trap Characterizations of Al₂O₃/ZrO₂ and Al₂O₃/HfO₂ Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress

Abstract

This study represents a comparison of the border trap behavior and reliability between HfO2 and ZrO2 films on n-In0.53Ga0.47As with an Al2O3 interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N2:H2 mixed FGA passivates the border trap quite well, whereas N2-based RTA performs better on interface traps. Al2O3/HfO2 showed more degradation in terms of the threshold voltage shift while Al2O3/ZrO2 showed higher leakage current behavior. Moreover, Al2O3/ZrO2 showed a higher permittivity, hysteresis, and breakdown field than Al2O3/HfO2.

Keywords

• iii–v semiconductor
• atomic layer deposition
• border trap
• constant voltage stress
• high-<i>k</i>
• interface trap
• post metal annealing