Tunable electronic structure of two-dimensional transition metal chalcogenides for optoelectronic applications
Jing Yumei,
Liu Baoze,
Zhu Xukun,
Ouyang Fangping,
Sun Jian,
Zhou Yu
Affiliations
Jing Yumei
School of Physics and Electronics, and Institute of Super-microstructure and Ultrafast Process in Advanced Materials, Central South University, Changsha 410083, PR China
Liu Baoze
School of Physics and Electronics, and Institute of Super-microstructure and Ultrafast Process in Advanced Materials, Central South University, Changsha 410083, PR China
Zhu Xukun
School of Physics and Electronics, and Institute of Super-microstructure and Ultrafast Process in Advanced Materials, Central South University, Changsha 410083, PR China
Ouyang Fangping
School of Physics and Electronics, and Institute of Super-microstructure and Ultrafast Process in Advanced Materials, Central South University, Changsha 410083, PR China
Sun Jian
School of Physics and Electronics, and Institute of Super-microstructure and Ultrafast Process in Advanced Materials, Central South University, Changsha 410083, PR China
Zhou Yu
School of Physics and Electronics, and Institute of Super-microstructure and Ultrafast Process in Advanced Materials, Central South University, Changsha 410083, PR China
Differing from its bulk counterparts, atomically thin two-dimensional transition metal dichalcogenides that show strong interaction with light are considered as new candidates for optoelectronic devices. Either physical or chemical strategies can be utilized to effectively tune the intrinsic electronic structures for adopting optoelectronic applications. This review will focus on the different tuning strategies that include its physics principles, in situ experimental techniques, and its application of various optoelectronic devices.
