Research progress in solar-blind UV detectors based on wide-band semiconductor Ga2O3

SHEN Leyun; ZHANG Tao; LIU Yunze; WU Huishan; WANG Fengzhi; PAN Xinhua; YE Zhizhen

doi:10.11868/j.issn.1001-4381.2021.001100

Cailiao gongcheng (Oct 2023)

Research progress in solar-blind UV detectors based on wide-band semiconductor Ga2O3

SHEN Leyun,
ZHANG Tao,
LIU Yunze,
WU Huishan,
WANG Fengzhi,
PAN Xinhua,
YE Zhizhen

Affiliations

SHEN Leyun: State Key Laboratory of Silicon and Avanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China
ZHANG Tao: State Key Laboratory of Silicon and Avanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China
LIU Yunze: State Key Laboratory of Silicon and Avanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China
WU Huishan: State Key Laboratory of Silicon and Avanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China
WANG Fengzhi: State Key Laboratory of Silicon and Avanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China
PAN Xinhua: State Key Laboratory of Silicon and Avanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China
YE Zhizhen: State Key Laboratory of Silicon and Avanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, China

DOI: https://doi.org/10.11868/j.issn.1001-4381.2021.001100
Journal volume & issue: Vol. 51, no. 10
pp. 13 – 26

Abstract

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Ga2O3 is an ultra-wide band semiconductor corresponding to the deep ultraviolet(UV) spectrum, which can be used to prepare solar-blind UV detectors. The solar-blind ultraviolet detectors are widely used in military and aerospace fields dueto strong anti-interference ability, high detection sensitivity and low background noise.The basic properties of Ga2O3 materials, including different crystal structures and their preparation, and the recent progress in solar-blind UV detectors based on Ga2O3 were introduced in this paper. Among them, metal-semiconductor-metal (MSM) structure of Ga2O3 devices are the most common, which are expected to achieve business application with commercial parameters. The Ga2O3-based heterostructure and Schottky detectors also exhibit excellent performance and self-supply characteristics. In addition, Ga2O3 devices based on thin film transistor become a potential solar-blind ultraviolet detector. They combine the working mechanism of MSM and transistor structure to obtain high light gain, which are suitable for weak signal detection.

Published in Cailiao gongcheng

ISSN: 1001-4381 (Print)
Publisher: Journal of Materials Engineering
Country of publisher: China
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
Website: http://jme.biam.ac.cn/CN/1001-4381/home.shtml

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