N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Prepared by Molecular Beam Epitaxy

Abstract

N-channel lnGaAs quantum well lasing thyristors (QWLT) based on regenerative loop of potential barrier lowering resulted from the forward biased pn junction is demonstrated in a AlGaAs/GaAs double heterostructure. Excellent electrical switching characteristics with a high voltage control efficiency ηv(=Vs/VH) of 6.7 have been obtained when the device is operated in the dark. Typical OFF- and ON-state resistances are 150KΩ and 10Ω respectively. A lasing threshold current density, front slope efficiency, and external differential quantum efficiency measured in as-cleaved device are 183A/cm2, 0.4mW/mA, and 31%, respectively. The peak emission wavelength is centered at about 980nm.