Engineering Dielectric Materials for High-Performance Organic Light Emitting Transistors (OLETs)

Abstract

Organic light emitting transistors (OLETs) represent a relatively new technology platform in the field of optoelectronics. An OLET is a device with a two-fold functionality since it behaves as a thin-film transistor and at the same time can generate light under appropriate bias conditions. This Review focuses mainly on one of the building blocks of such device, namely the gate dielectrics, and how it is possible to engineer it to improve device properties and performances. While many findings on gate dielectrics can be easily applied to organic light emitting transistors, we here concentrate on how this layer can be exploited and engineered as an active tool for light manipulation in this novel class of optoelectronic devices.

Keywords

• organic light emitting transistor (OLET)
• gate dielectrics
• low-bias transistors
• insulating layer
• high-<i>k</i> dielectrics
• high-<i>k</i> oxide