Ozone detection by means of semiconductor gas sensors based on palladium (II) oxide

Abstract

Thin film semiconductor sensors based on palladium oxide were produced to analyse the concentration of ozone in the air. The palladium oxide films were obtained by means of thermal oxidation of ~ 20-30 nm metal in air at various temperatures. The oxide films were studied using electron microscopy and reflection high-energy electron diffraction. The optical, electrophysical, and gas sensitivity properties of the films were investigated. The study determined the optimal oxidation annealing temperature that ensures the uniform composition of the films and absence of electrical noise affecting the gas detection process. The article explains that electrical noise in ultrathin films is caused by their fragmentation during oxidation annealing. The study demonstrated the high sensitivity of the obtained films to oxide

Keywords

• palladium oxide
• ultrathin films
• electron microscopy
• reflection high-energy electron diffraction
• phase composition
• electrical noise
• gas sensitivity properties
• ozone