Electric Properties of Organic-on-Inorganic n-Si/VOPc Heterojunction

Abstract

In the current study vanadyl-phthalocyanine (VOPc) thin films were deposited by vacuum evaporation on n-Si substrate resulting in an organic-on-inorganic (n-Si/VOPc) heterojunctions. Ag films were deposited as electrodes. Thicknesses of the VOPc films were in the range of 100-300 nm. The dark I-V characteristics exhibited rectification behavior. The rectification ratio (RR) decreased from 4 to 0.4 as the thickness of the VOPc film decreased. The dark I-V characteristics were simulated by modified Schokley equation and spaace-charge limited currents (SCLC) approach. Investigations were carried out to study the effect of VOPc films thickness on reverse saturation current , diode quality factor and mobility of charge carriers.