Refractive Indices of Ge and Si at Temperatures between 4–296 K in the 4–8 THz Region

Abstract

Refractive indices of high resistivity Si and Ge were measured at temperatures between 4–296 K and at frequencies between 4.2–7.7 THz using a Fourier-transform spectrometer (FTS) in transmission mode. A phenomenological model of the temperature dependence of the refractive index is proposed.

Keywords

• terahertz
• refractive index
• temperature dependence
• silicon
• germanium