Front-Wall Illumination of Spray-Deposited PbS-Si HJ Detector

Abstract

(n-p) PbS-Si HJ detector has been fabricated by pyrolytic spraying of PbSheterolayer onto p-type silicon wafer. PbS-side of illumination in the wavelengthrange (450-1150 nm) revealed that the quantum efficiency plateau fairly conformsto that of Si homojunction. Significant specific detectivity of about 8.5 x 1011 cmHz1/2 W-1 has been obtained at 850 nm wavelength. Signal to noise ratio revealedan optimum operation voltage at 2.5 V.

Keywords

• pbs
• si heterojunction
• photodetector
• spray pyrolysis