Compact SIW Fed Dual-Port Single Element Annular Slot MIMO Antenna for 5G mmWave Applications

Muhammad Usman; Enis Kobal; Jamal Nasir; Yuanwei Zhu; Chao Yu; Anding Zhu

doi:10.1109/ACCESS.2021.3091835

IEEE Access (Jan 2021)

Compact SIW Fed Dual-Port Single Element Annular Slot MIMO Antenna for 5G mmWave Applications

Muhammad Usman,
Enis Kobal,
Jamal Nasir,
Yuanwei Zhu,
Chao Yu,
Anding Zhu

Affiliations

Muhammad Usman: ORCiD; School of Electrical and Electronic Engineering, University College Dublin, Dublin 4, D04 V1W8 Ireland
Enis Kobal: ORCiD; School of Electrical and Electronic Engineering, University College Dublin, Dublin 4, D04 V1W8 Ireland
Jamal Nasir: ORCiD; Department of Electrical Engineering, COMSATS Institute of Information Technology, Abbottabad, Pakistan
Yuanwei Zhu: ORCiD; State Key Laboratory of Millimeter Waves, School of Information Science and Engineering, Southeast University, Nanjing, China
Chao Yu: ORCiD; State Key Laboratory of Millimeter Waves, School of Information Science and Engineering, Southeast University, Nanjing, China
Anding Zhu: ORCiD; School of Electrical and Electronic Engineering, University College Dublin, Dublin 4, D04 V1W8 Ireland

DOI: https://doi.org/10.1109/ACCESS.2021.3091835
Journal volume & issue: Vol. 9
pp. 91995 – 92002

Abstract

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In this article, a compact dual-port single element MIMO antenna is presented for millimeter wave (mmWave) 5G wireless applications. The presented antenna design consists of an annular ring slot that is fed by a Substrate Integrated Waveguide (SIW) at the two opposite sides of the substrate. The antenna resonates at 28GHz and its 10dB impedance bandwidth is 400MHz. The isolation between the ports is reduced by introducing additional annular slot that acts as a cavity which results in an isolation better than 20dB at 28GHz. The measured gain of both ports are 6.9 dBi which is the highest gain per unit element at 28GHz in the literature. The measured diversity gain and envelope correlation coefficient are 9.98dB and 0.065, respectively, at the band of interest. The measured and simulated results are in good agreement.

Published in IEEE Access

ISSN: 2169-3536 (Online)
Publisher: IEEE
Country of publisher: United States
LCC subjects: Technology: Electrical engineering. Electronics. Nuclear engineering
Website: https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6287639

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