Nature Communications (Jan 2019)

Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling

  • Aitian Chen,
  • Yan Wen,
  • Bin Fang,
  • Yuelei Zhao,
  • Qiang Zhang,
  • Yuansi Chang,
  • Peisen Li,
  • Hao Wu,
  • Haoliang Huang,
  • Yalin Lu,
  • Zhongming Zeng,
  • Jianwang Cai,
  • Xiufeng Han,
  • Tom Wu,
  • Xi-Xiang Zhang,
  • Yonggang Zhao

DOI
https://doi.org/10.1038/s41467-018-08061-5
Journal volume & issue
Vol. 10, no. 1
pp. 1 – 7

Abstract

Read online

Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic tunnel junction on a ferroelectric substrate at room temperature and zero magnetic field.