High-Power Terahertz Photonic Crystal Surface-Emitting Laser with High Beam Quality
Junhong Liu,
Yunfei Xu,
Rusong Li,
Jinchuan Zhang,
Ning Zhuo,
Junqi Liu,
Lijun Wang,
Fengmin Cheng,
Shuman Liu,
Fengqi Liu,
Quanyong Lu,
Shenqiang Zhai
Affiliations
Junhong Liu
Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Yunfei Xu
Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Rusong Li
Division of Quantum Materials and Devices, Beijing Academy of Quantum Information Sciences, Beijing 100193, China
Jinchuan Zhang
Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Ning Zhuo
Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Junqi Liu
Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Lijun Wang
Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Fengmin Cheng
Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Shuman Liu
Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Fengqi Liu
Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Quanyong Lu
Division of Quantum Materials and Devices, Beijing Academy of Quantum Information Sciences, Beijing 100193, China
Shenqiang Zhai
Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
The photonic crystal surface-emitting laser (PCSEL) has attracted much attention due to the advantages of a small far-field divergence angle and high output power. Here, we report a high-power terahertz (THz) photonic crystal laser with high beam quality through the optimization of the absorption boundary condition and the introduction of the symmetrically distributed electrodes. Single-mode surface emission at 3.4 THz with the maximum peak output power of 50 mW is demonstrated. Meanwhile, a high symmetric far-field pattern with C6 symmetry and a small divergence angle is achieved. In this device, the integration of the stable single-mode operation, high beam quality and high output power is realized, which may have great significance for practical applications.
