A Methodology for Reconstructing DSET Pulses from Heavy-Ion Broad-Beam Measurements

Abstract

A table-based method for the estimation of heavy-ion-induced Digital Single Event Transient (DSET) voltage pulse-width in a single logic cell has been developed. The estimation method is based on the actual heavy-ion-induced transient current data in a single metal-oxide-semiconductor field effect transistor (MOSFET) used in the logic cell. The DSET pulse waveform in an inverter is obtained from which the pulse-width was estimated to be 420 ps. This DSET pulse-width value (420 ps) falls within the reasonable range of the DSET pulse-width distribution measured by the self-triggering flip-flop latch chain under heavy-ion irradiation test conditions.

Keywords

• fully-depleted silicon-on-insulator (fd-soi)
• heavy ion
• logic large scale integrations (lsis)
• space environment
• single event effects
• single event transient pulse