Nature Communications (Mar 2023)
Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene
- Jubin Nathawat,
- Ishiaka Mansaray,
- Kohei Sakanashi,
- Naoto Wada,
- Michael D. Randle,
- Shenchu Yin,
- Keke He,
- Nargess Arabchigavkani,
- Ripudaman Dixit,
- Bilal Barut,
- Miao Zhao,
- Harihara Ramamoorthy,
- Ratchanok Somphonsane,
- Gil-Ho Kim,
- Kenji Watanabe,
- Takashi Taniguchi,
- Nobuyuki Aoki,
- Jong E. Han,
- Jonathan P. Bird
Affiliations
- Jubin Nathawat
- Department of Electrical Engineering, University at Buffalo, the State University of New York
- Ishiaka Mansaray
- Department of Physics, University at Buffalo, the State University of New York
- Kohei Sakanashi
- Department of Materials Science, Chiba University, Inage-ku
- Naoto Wada
- Department of Materials Science, Chiba University, Inage-ku
- Michael D. Randle
- Department of Electrical Engineering, University at Buffalo, the State University of New York
- Shenchu Yin
- Department of Electrical Engineering, University at Buffalo, the State University of New York
- Keke He
- Department of Electrical Engineering, University at Buffalo, the State University of New York
- Nargess Arabchigavkani
- Department of Electrical Engineering, University at Buffalo, the State University of New York
- Ripudaman Dixit
- Department of Electrical Engineering, University at Buffalo, the State University of New York
- Bilal Barut
- Department of Physics, University at Buffalo, the State University of New York
- Miao Zhao
- High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics of Chinese Academy of Sciences
- Harihara Ramamoorthy
- Department of Electronics Engineering, Faculty of Engineering, King Mongkut’s Institute of Technology Ladkrabang
- Ratchanok Somphonsane
- Department of Physics, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang
- Gil-Ho Kim
- School of Electronic and Electrical Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University
- Kenji Watanabe
- Advanced Materials Laboratory, National Institute for Materials Science
- Takashi Taniguchi
- Advanced Materials Laboratory, National Institute for Materials Science
- Nobuyuki Aoki
- Department of Materials Science, Chiba University, Inage-ku
- Jong E. Han
- Department of Physics, University at Buffalo, the State University of New York
- Jonathan P. Bird
- Department of Electrical Engineering, University at Buffalo, the State University of New York
- DOI
- https://doi.org/10.1038/s41467-023-37292-4
- Journal volume & issue
-
Vol. 14,
no. 1
pp. 1 – 11
Abstract
Significant attention has been devoted to understanding the low-electric-field properties of carriers in moiré graphene, but high-electric-field transport has not been as well explored. Here, the authors find non-monotonic transport behavior at moiré minigaps due to competition between inter-band tunneling and coupling to out-of-equilibrium phonons.
