Control of Eu Oxidation State in Y<sub>2</sub>O<sub>3−x</sub>S<sub>x</sub>:Eu Thin-Film Phosphors Prepared by Atomic Layer Deposition: A Structural and Photoluminescence Study
José Rosa,
Jonas Deuermeier,
Pekka J. Soininen,
Markus Bosund,
Zhen Zhu,
Elvira Fortunato,
Rodrigo Martins,
Mutsumi Sugiyama,
Saoussen Merdes
Affiliations
José Rosa
Beneq Oy, Olarinluoma 9, FI-02200 Espoo, Finland
Jonas Deuermeier
i3N/CENIMAT, Department of Materials Science, Faculty of Sciences and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal
Pekka J. Soininen
Beneq Oy, Olarinluoma 9, FI-02200 Espoo, Finland
Markus Bosund
Beneq Oy, Olarinluoma 9, FI-02200 Espoo, Finland
Zhen Zhu
Beneq Oy, Olarinluoma 9, FI-02200 Espoo, Finland
Elvira Fortunato
i3N/CENIMAT, Department of Materials Science, Faculty of Sciences and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal
Rodrigo Martins
i3N/CENIMAT, Department of Materials Science, Faculty of Sciences and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal
Mutsumi Sugiyama
Department of Electrical Engineering, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
Structural and photoluminescence studies were carried out on Eu-doped Y2O3−xSx thin films grown by atomic layer deposition at 300 °C. (CH3Cp)3Y, H2O, and H2S were used as yttrium, oxygen, and sulfur precursors, respectively, while Eu(thd)3 was used as the europium precursor. The Eu oxidation state was controlled during the growth process by following the Eu(thd)3 pulse with either a H2S or O3 pulse. The Eu(thd)3/O3 pulse sequence led to photoluminescence emission above 550 nm, whereas the Eu(thd)3/H2S pulse sequence resulted in emission below 500 nm.
