Research progress of semiconductive shielding layer of HVDC cable

Abstract

As an indispensable part of high-voltage direct current (HVDC) cable, the semiconductive shielding layer plays the role of uniforming electric field in the cable. However, cable shielding materials >35 kV mainly rely on foreign imports in China, which belongs to the technical weak issues in the field of electrical materials. At present, there are few systematic reports on semiconductive shielding material of HVDC cable. In the work, the mechanisms of charge conduction and thermal conduction of semiconductive material have been introduced. Effect of raw material, carbon black content and the second conductive filler on the resistance characteristics of the semiconductive layer, the charge accumulation characteristics of the insulating layer and the interface characteristics have been studied. A kind of semiconductive layer as a high voltage terminal charge emission method has been proposed to study charge emission from the semiconducting layer to the insulation layer. This work can provide theoretical guidance for the research of semiconductive shielding materials.

Keywords

• thermal conductivity
• cable shielding
• carbon
• power cables
• hvdc power transmission
• electric fields
• semiconductor materials
• high-voltage direct current cable
• electric field
• cable shielding materials
• electrical materials
• hvdc cable
• charge conduction
• thermal conduction
• carbon black content
• charge accumulation characteristics
• insulating layer
• high voltage terminal charge emission method
• insulation layer
• semiconductive shielding layer material
• china
• second conductive filler
• interface characteristics
• voltage 35.0 kv
• c