The Numerical Simulations and Experimental Study of an 8-Inch SiC Single Crystal with Reduced BPD Density
Chengyuan Sun,
Yunfei Shang,
Zuotao Lei,
Yujian Wang,
Hao Xue,
Chunhui Yang,
Yingmin Wang
Affiliations
Chengyuan Sun
MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China
Yunfei Shang
MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China
Zuotao Lei
MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China
Yujian Wang
Key Laboratory of Advanced Semiconductor Materials of China Electronics Technology Group Corporation, Tianjin 300220, China
Hao Xue
Key Laboratory of Advanced Semiconductor Materials of China Electronics Technology Group Corporation, Tianjin 300220, China
Chunhui Yang
MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China
Yingmin Wang
Key Laboratory of Advanced Semiconductor Materials of China Electronics Technology Group Corporation, Tianjin 300220, China
The basal plane dislocation (BPD) density is one of the most important defects affecting the application of SiC wafers. In this study, numerical simulations and corresponding experiments were conducted to investigate the influence of cooling processes, seed-bonding methods, and graphite crucible materials on the BPD density in an 8-inch N-type 4H-SiC single crystal grown by the physical vapor transport (PVT) method. The results showed that the BPD density could be effectively reduced by increasing the cooling rate, optimizing the seed-bonding method, and adopting a graphite crucible with a similar coefficient of thermal expansion as the SiC single crystal. The BPD density in the experiments showed that a high cooling rate reduced the BPD density from 4689 cm−2 to 2925 cm−2; optimization of the seed-bonding method decreased the BPD density to 1560 cm−2. The BPD density was further reduced to 704 cm−2 through the adoption of a graphite crucible with a smaller thermal expansion coefficient.
