Two-dimensional multibit optoelectronic memory with broadband spectrum distinction

Abstract

Continued device miniaturization and feasibility of integrating two-dimensional materials into circuits have enabled flexible and transparent optoelectronic memories. Here, the authors show a WSe2–hBN-based heterostructure memory with switching ratio of ~1.1 × 106, ensuring over 128 distinct storage states and retention time of ~4.5 × 104 s.