State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China
Liang Zhongzhu
State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China
Zeng Guang
State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin300072, China
Meng Dejia
State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China
Smith David R.
Center for Metamaterials and Integrated Plasmonics, Duke University, P.O. Box 90291, Durham, North Carolina27708, USA
Liu Qing Huo
Department of Electrical and Computer Engineering, Duke University, P.O. Box 90291, Durham, North Carolina27708, USA
Yang Qingrui
State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin300072, China
Zhang Menglun
State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin300072, China
Pang Wei
State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin300072, China
Liang Jingqiu
State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China
Bourouina Tarik
State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China
Cointegration and coupling a perfect metamaterial absorber (PMA) together with a film bulk acoustic wave resonator (FBAR) in a monolithic fashion is introduced for the purpose of producing ultracompact uncooled infrared sensors of high sensitivity. An optimized ultrathin multilayer stack was implemented to realize the proposed device. It is experimentally demonstrated that the resonance frequency of the FBAR can be used efficiently as a sensor output as it downshifts linearly with the intensity of the incident infrared irradiation. The resulting sensor also achieves a high absorption of 88% for an infrared spectrum centered at a wavelength of 8.2 μm. The structure is compact and can be easily integrated on a CMOS-compatible chip since both the FBAR and PMA utilize and share the same stack of metal and dielectric layers.
