Raman spectroscopy of silicon, doped with platinum and irradiated by protons

Abstract

In this work, the influence of proton irradiation and platinum impurities on the crystal structure of silicon samples was studied by Raman spectroscopy. It has been established that the doping of single crystals of Si with platinum leads to minor changes and the appearance of new vibrations in the Raman spectra. The intensity of the main silicon peak at 521 cm–1 decreases by a factor of 1.6, while its FWHM practically does not change and is about 4.0 cm–1. Such a decrease in the intensity of the peak is probably due to the weakening and breaking of bonds in the structure of the silicon crystal lattice due to the diffusion of Pt. It is shown that the appearance of new vibrations in the range 60–280 cm–1 in the spectra of Si is associated with the presence of elemental Pt and the formation of PtSi. It has been found that irradiation of Si samples with 600 keV protons leads to a change in the Raman spectra, and the peaks from Pt and/or PtSi disappear.