Influence of sublimation surface on mass transport in AlN crystal growth by physical vapor transport process
Danyang Fu,
Qikun Wang,
Gang Zhang,
Zhe Li,
Jiali Huang,
Jiang Wang,
Liang Wu
Affiliations
Danyang Fu
State Key Laboratory of Advanced Special Steel and Shanghai Key Laboratory of Advanced Ferrometallurgy and School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China
Qikun Wang
Ultratrend Technologies Co., Ltd., Room 518, Building 3, No. 503, Shunfeng Road, Liping District, Hangzhou City, Zhejiang Province 311199, China
Gang Zhang
State Key Laboratory of Advanced Special Steel and Shanghai Key Laboratory of Advanced Ferrometallurgy and School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China
Zhe Li
State Key Laboratory of Advanced Special Steel and Shanghai Key Laboratory of Advanced Ferrometallurgy and School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China
Jiali Huang
Ultratrend Technologies Co., Ltd., Room 518, Building 3, No. 503, Shunfeng Road, Liping District, Hangzhou City, Zhejiang Province 311199, China
Jiang Wang
State Key Laboratory of Advanced Special Steel and Shanghai Key Laboratory of Advanced Ferrometallurgy and School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China
Liang Wu
Ultratrend Technologies Co., Ltd., Room 518, Building 3, No. 503, Shunfeng Road, Liping District, Hangzhou City, Zhejiang Province 311199, China
A series of numerical experiments were performed to investigate the influence of the sublimation surface on mass transport during the aluminum nitride (AlN) growth process. The distribution of Al partial pressure is strongly affected by the cover of the sublimation interface. The morphology of the growth interface can be controlled by the cover of the sublimation interface to achieve the growth of a specific crystal shape. Based on the same temperature field, the influence of sublimation interface cover on the growth rate indicates that temperature and temperature gradient are not the main limiting factors of the growth rate and further verifies that Al partial pressure gradient is the rate-limiting step. Under the growth system and specific growth conditions, a smooth growth interface can be obtained by using [0, 2/6] sublimation interface cover, so as to realize the rapid growth of high quality AlN crystals.
