Sensors & Transducers (Mar 2015)

Low Loss High Isolation NEMS/MEMS Switch for High Frequency RF Applications

  • Elangovan R.,
  • Usha Kiran Kommuri

Journal volume & issue
Vol. 186, no. 3
pp. 134 – 139

Abstract

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MEMS switches are advantageous in terms of low power consumption, switching times, high isolation, low insertion loss and many more. This paper proposes a MEMS switch with high isolation and low insertion loss. The model used is a CPW configuration with a cantilever series switch built on a silicon substrate. The switch parameters are optimized for the lowest insertion loss and return loss. An insertion loss values of -0.1305 dB in the down state with return loss of -38 dB and -75 dB of isolation have been observed in the high frequency range.

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