Low Loss High Isolation NEMS/MEMS Switch for High Frequency RF Applications

Abstract

MEMS switches are advantageous in terms of low power consumption, switching times, high isolation, low insertion loss and many more. This paper proposes a MEMS switch with high isolation and low insertion loss. The model used is a CPW configuration with a cantilever series switch built on a silicon substrate. The switch parameters are optimized for the lowest insertion loss and return loss. An insertion loss values of -0.1305 dB in the down state with return loss of -38 dB and -75 dB of isolation have been observed in the high frequency range.

Keywords

• NEMS
• MEMS switch
• Low Loss
• High Isolation
• RADAR.